Markovich, Gil and Leff, Daniel V. and Chung, Sung-Wook and Soyez, Hermes M. and Dunn, Bruce and Heath, James R. (1997) Parallel fabrication and single-electron charging of devices based on ordered, two-dimensional phases of organically functionalized metal nanocrystals. Applied Physics Letters, 70 (23). pp. 3107-3109. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:MARapl97
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A parallel technique for fabricating single-electron, solid-state capacitance devices from ordered, two-dimensional closest-packed phases of organically functionalized metal nanocrystals is presented. The nanocrystal phases were prepared as Langmuir monolayers and subsequently transferred onto Al-electrode patterned glass substrates for device construction. Alternating current impedance measurements were carried out to probe the single-electron charging characteristics of the devices under both ambient and 77 K conditions. Evidence of a Coulomb blockade and step structure reminiscent of a Coulomb staircase is presented.
|Additional Information:||©1997 American Institute of Physics. Received 3 January 1997; accepted 9 April 1997. This work was supported by the Office of Naval Research, Order No. N00014-95-F0099 and by the Director, Office of Energy Research, Office of Basic Energy Research, Division of Materials Sciences of the U.S. Department of Energy under Contract No. DE-AC03-76SF00098, and by the NSF-NYI Program. One author (J.R.H.) acknowledges support from the David and Lucile Packard Foundation, and a Dreyfus fellowship. A second author (G.M.) acknowledges support from the Fulbright Program. Two authors (B.D. and H.M.S.) acknowledge funding from the NSF (DMR-9408780).|
|Subject Keywords:||SILVER; THIN FILMS; TUNNEL EFFECT; CAPACITANCE; GRANULAR MATERIALS; COULOMB FIELD; GRAIN SIZE|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Tony Diaz|
|Deposited On:||01 Sep 2006|
|Last Modified:||26 Dec 2012 09:00|
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