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Very High Modulation Efficiency of Ultralow Threshold Current Single Quantum Well InGaAs Lasers

Chen, T. R. and Zhao, B. and Eng, L. and Zhuang, Y. H. and O'Brien, J. and Yariv, A. (1993) Very High Modulation Efficiency of Ultralow Threshold Current Single Quantum Well InGaAs Lasers. Electronics Letters, 29 (17). pp. 1525-1526. ISSN 0013-5194. http://resolver.caltech.edu/CaltechAUTHORS:CHEel93

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Abstract

A record high current modulation efficiency of 5 GHz/[sqrt](mA) has been demonstrated in an ultralow threshold strained layer single quantum well InGaAs laser.


Item Type:Article
Additional Information:©1993 IEE. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEE. This work was supported by the Advanced Research Project Agency, by the Office of Naval Research and by the Air Force Office of Scientific Research.
Subject Keywords:Semiconductor lasers, High-speed optical techniques
Record Number:CaltechAUTHORS:CHEel93
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:CHEel93
Alternative URL:http://ieeexplore.ieee.org/iel1/2220/6034/00234368.pdf
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:472
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:22 Jun 2005
Last Modified:26 Dec 2012 08:40

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