Goodwin, D. G. (1991) Simulations of high-rate diamond synthesis: Methyl as growth species. Applied Physics Letters, 59 (3). pp. 277-279. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:GOOapl91
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The results of numerical simulations of two high-rate diamond growth environments (oxygen-acetylene torch and dc arcjet) are reported. The calculations account in detail for boundary-layer transport, gas-phase chemistry, and gas-surface chemistry. Diamond growth rates are calculated self-consistently with the gas-phase concentrations, using a recently proposed methyl growth mechanism. The calculated growth rates agree well with the measured values, indicating that this growth mechanism can account for both high- and low-rate diamond growth.
|Additional Information:||Copyright © 1991 American Institute of Physics. Received 4 March 1991; accepted 15 April 1991. The author would like to acknowledge Dr. Stephen Harris for enlightening discussions regarding diamond growth kinetics. This work has been supported, in part, by the Office of Naval Research and the National Science Foundation.|
|Subject Keywords:||DIAMONDS; SYNTHESIS; COMPUTERIZED SIMULATION; CHEMISTRY; PLASMA SIMULATION; NUMERICAL ANALYSIS; CHEMICAL REACTION KINETICS; CHEMICAL VAPOR DEPOSITION; CARBON|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Tony Diaz|
|Deposited On:||05 Sep 2006|
|Last Modified:||26 Dec 2012 09:01|
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