Lien, C. D. and Nicolet, M-A. (1984) Impurity effects in transition metal silicides. Journal of Vacuum Science and Technology B, 2 (4). pp. 738-747. ISSN 1071-1023 http://resolver.caltech.edu/CaltechAUTHORS:LIEjvstb84
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Impurities can affect the properties of silicides directly by virtue of their presence. Impurities can also influence the processes by which silicides are formed. The effect of impurities on the reaction of transition metal films with a silicon substrate induced by thermal annealing are well documented. The interpretation of these results is discussed. It is shown that impurity redistribution is a major factor in determining how significant the effect of an impurity is. Redistribution observed for dopant impurities is also discussed.
|Additional Information:||© 1984 American Vacuum Society. Received 5 June 1984; accepted 31 July 1984. The authors thank Dr. S. S. Lau, Dr. M. Bartur, Dr. K. T. Ho, and I. Suni for helpful discussions. The research described in this paper was sponsored in part by the Jet Propulsion Laboratory, California Institute of Technology, Director's Discretionary Fund through an agreement with the National Aeronautics and Space Administration (A. Morrison). The authors wish to thank Dr. Paihung Pan and Dr. Peter W. Lew for permission to use their figures.|
|Subject Keywords:||SILICIDES; THIN FILMS; IMPURITIES; DOPING PROFILES; PHYSICAL PROPERTIES; CRYSTAL DOPING; ANNEALING; ELECTRICAL PROPERTIES; METALS|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Lindsay Cleary|
|Deposited On:||06 Sep 2006|
|Last Modified:||26 Dec 2012 09:01|
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