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Non-Volatile Memory Characteristics of Submicrometre Hall Structures Fabricated in Epitaxial Ferromagnetic MnAl Films on GaAs

De Boeck, J. and Sands, T. and Harbison, J. P. and Scherer, A. and Gilchrist, H. and Cheeks, T. L. and Tanaka, M. and Keramidas, V. G. (1993) Non-Volatile Memory Characteristics of Submicrometre Hall Structures Fabricated in Epitaxial Ferromagnetic MnAl Films on GaAs. Electronics Letters, 29 (4). pp. 421-423. ISSN 0013-5194. http://resolver.caltech.edu/CaltechAUTHORS:DEBel93

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Abstract

Hall-effect structures with submicrometre linewidths (<0.3pm) have been fabricated in ferromagnetic thin films of Mn[sub 0.60]Al[sub 0.40] which are epitaxially grown on a GaAs substrate. The MnAl thin films exhibit a perpendicular remanent magnetisation and an extraordinary Hall effect with square hysteretic behaviour. The presence of two distinct stable readout states demonstrates the potential of using ultrasmall ferromagnetic volumes for electrically addressable, nonvolatile storage of digital information.


Item Type:Article
Additional Information:©1993 IEE. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEE. J. De Boeck acknowledges partial financial support by NATO.
Subject Keywords:Epitaxy and epitaxial growth, Memories, Thin-film devices, Magnetic devices and materials
Record Number:CaltechAUTHORS:DEBel93
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:DEBel93
Alternative URL:http://ieeexplore.ieee.org/iel1/2220/6809/00274816.pdf
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:477
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:22 Jun 2005
Last Modified:26 Dec 2012 08:40

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