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Kinetics of NiAl3 growth induced by steady-state thermal annealing at the Ni-<Al> interface

Zhao, X.-A. and Yang, H.-Y. and Nicolet, M-A. (1987) Kinetics of NiAl3 growth induced by steady-state thermal annealing at the Ni-<Al> interface. Journal of Applied Physics, 62 (5). pp. 1821-1825. ISSN 0021-8979. http://resolver.caltech.edu/CaltechAUTHORS:ZHAjap87

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Abstract

Substrates of large grained aluminum crystals were prepared by the strain annealing technique, and Ni films were vacuum evaporated on these substrates after an in situ sputter cleaning process. Upon thermal annealing of samples in vacuum, a laterally uniform growth of NiAl3 is observed, starting from 330 °C, without any indication of boundary diffusion effects. The aluminide phase grows as (duration)1/2 after an initial incubation period with an activation energy of 1.4 eV, i.e., K=x2/t=0.387 (cm^2/s)exp(–1.4 eV/kT) for 600 K<T<650 K. Impurities, either at the interface or inside the Ni film, retard this reaction.


Item Type:Article
Additional Information:Copyright © 1987 American Institute of Physics (Received 13 February 1987; accepted 7 May 1987) We thank R. Gorris, Caltech, for technical assistance. This work was financially supported in part by the Office of Naval Research under Contract No, N00014-84-K-0275.
Subject Keywords:NICKEL COMPOUNDS; ALUMINIUM COMPOUNDS; FILM GROWTH; DIFFUSION; ALUMINIUM; NICKEL; ANNEALING; VAPOR DEPOSITED COATINGS; VACUUM COATING; VACUUM EVAPORATION; IMPURITIES; INTERFACE STRUCTURE; SURFACE REACTIONS; INTERFACE PHENOMENA; SYNTHESIS
Record Number:CaltechAUTHORS:ZHAjap87
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:ZHAjap87
Alternative URL:http://dx.doi.org/10.1063/1.339563
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:4773
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:06 Sep 2006
Last Modified:26 Dec 2012 09:01

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