Zhao, X.-A. and Yang, H.-Y. and Nicolet, M-A. (1987) Kinetics of NiAl3 growth induced by steady-state thermal annealing at the Ni-<Al> interface. Journal of Applied Physics, 62 (5). pp. 1821-1825. ISSN 0021-8979. http://resolver.caltech.edu/CaltechAUTHORS:ZHAjap87
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Substrates of large grained aluminum crystals were prepared by the strain annealing technique, and Ni films were vacuum evaporated on these substrates after an in situ sputter cleaning process. Upon thermal annealing of samples in vacuum, a laterally uniform growth of NiAl3 is observed, starting from 330 °C, without any indication of boundary diffusion effects. The aluminide phase grows as (duration)1/2 after an initial incubation period with an activation energy of 1.4 eV, i.e., K=x2/t=0.387 (cm^2/s)exp(–1.4 eV/kT) for 600 K<T<650 K. Impurities, either at the interface or inside the Ni film, retard this reaction.
|Additional Information:||Copyright © 1987 American Institute of Physics (Received 13 February 1987; accepted 7 May 1987) We thank R. Gorris, Caltech, for technical assistance. This work was financially supported in part by the Office of Naval Research under Contract No, N00014-84-K-0275.|
|Subject Keywords:||NICKEL COMPOUNDS; ALUMINIUM COMPOUNDS; FILM GROWTH; DIFFUSION; ALUMINIUM; NICKEL; ANNEALING; VAPOR DEPOSITED COATINGS; VACUUM COATING; VACUUM EVAPORATION; IMPURITIES; INTERFACE STRUCTURE; SURFACE REACTIONS; INTERFACE PHENOMENA; SYNTHESIS|
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|Deposited On:||06 Sep 2006|
|Last Modified:||26 Dec 2012 09:01|
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