Hwang, Gyeong S. and Giapis, Konstantinos P. (1997) The influence of electron temperature on pattern-dependent charging during etching in high-density plasmas. Journal of Applied Physics, 81 (8). pp. 3433-3439. ISSN 0021-8979. http://resolver.caltech.edu/CaltechAUTHORS:HWAjap97c
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The effect of the electron temperature (Te) on charging potentials that develop in trenches during plasma etching of high aspect ratio polysilicon-on-insulator structures is studied by two-dimensional Monte Carlo simulations. Larger values of Te cause the potential of the upper photoresist sidewalls to become more negative; thus, more electrons are repelled back and the electron current density to the trench bottom decreases. The ensuing larger charging potential at the bottom surface perturbs the local ion dynamics so that more ions are deflected towards the polysilicon sidewalls causing (a) more severe lateral etching (notching) and (b) larger gate potentials, thereby increasing the probability of tunneling currents through the underlying gate oxide. The simulation results capture reported experimental trends and offer new insight into the nature of charging damage.
|Additional Information:||©1997 American Institute of Physics. (Received 2 December 1996; accepted 7 January 1997) This work was partially supported by an NSF Career Award to KPG (CTS-9623450).|
|Subject Keywords:||silicon; silicon-on-insulator; elemental semiconductors; sputter etching; plasma temperature; photoresists|
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|Deposited By:||Archive Administrator|
|Deposited On:||07 Sep 2006|
|Last Modified:||26 Dec 2012 09:01|
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