Hwang, Gyeong S. and Giapis, Konstantinos P. (1997) Pattern-Dependent Charging in Plasmas: Electron Temperature Effects. Physical Review Letters, 79 (5). pp. 845-848. ISSN 0031-9007. http://resolver.caltech.edu/CaltechAUTHORS:HWAprl97
See Usage Policy.
Use this Persistent URL to link to this item: http://resolver.caltech.edu/CaltechAUTHORS:HWAprl97
The differential charging of high-aspect-ratio dense structures during plasma etching is studied by two-dimensional Monte Carlo simulations. Enhanced electron shadowing at large electron temperatures is found to reduce the electron current density to the bottom of narrow trenches, causing buildup of large charging potentials on dielectric surfaces. These potentials alter the local ion dynamics, increase the flux of deflected ions towards the sidewalls, and result in distorted profiles. The simulation results capture reported experimental trends and reveal the physics of charging damage.
|Additional Information:||©1997 The American Physical Society Received 5 December 1996; revised 18 February 1997 This material was based upon work supported by an NSF Career Award to K. P. G. (CTS-9623450).|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Archive Administrator|
|Deposited On:||07 Sep 2006|
|Last Modified:||26 Dec 2012 09:01|
Repository Staff Only: item control page