Hwang, G. S. and Anderson, C. M. and Gordon, M. J. and Moore, T. A. and Minton, T. K. and Giapis, K. P. (1996) Gas-Surface Dynamics and Profile Evolution during Etching of Silicon. Physical Review Letters, 77 (14). pp. 3049-3052. ISSN 0031-9007. http://resolver.caltech.edu/CaltechAUTHORS:HWAprl96
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Scattering of energetic F atoms on a fluorinated Si surface is studied by molecular beam methods. The energy transfer closely follows hard-sphere collision kinematics. Energy and angular distributions of unreacted F atoms suggest significant multiple-bounce scattering in addition to single-bounce scattering and trapping desorption. An empirical model of the atom-surface interaction dynamics is used in a Monte Carlo simulation of topography evolution during neutral beam etching of Si. Model predictions of profile phenomena are validated by experiments.
|Additional Information:||©1996 The American Physical Society Received 2 May 1996 This work was supported by Sematech under Contract No. 75017492 and by the Ballistic Missile Defense Organization/ISTO. K. P. G. thanks the Camille and Henry Dreyfus Foundation for a New Faculty Award.|
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|Deposited On:||07 Sep 2006|
|Last Modified:||18 Sep 2014 18:11|
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