Hwang, G. S. and Anderson, C. M. and Gordon, M. J. and Moore, T. A. and Minton, T. K. and Giapis, K. P. (1996) Gas-Surface Dynamics and Profile Evolution during Etching of Silicon. Physical Review Letters, 77 (14). pp. 3049-3052. ISSN 0031-9007 http://resolver.caltech.edu/CaltechAUTHORS:HWAprl96
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Abstract
Scattering of energetic F atoms on a fluorinated Si surface is studied by molecular beam methods. The energy transfer closely follows hard-sphere collision kinematics. Energy and angular distributions of unreacted F atoms suggest significant multiple-bounce scattering in addition to single-bounce scattering and trapping desorption. An empirical model of the atom-surface interaction dynamics is used in a Monte Carlo simulation of topography evolution during neutral beam etching of Si. Model predictions of profile phenomena are validated by experiments.
| Item Type: | Article |
|---|---|
| Additional Information: | ©1996 The American Physical Society Received 2 May 1996 This work was supported by Sematech under Contract No. 75017492 and by the Ballistic Missile Defense Organization/ISTO. K. P. G. thanks the Camille and Henry Dreyfus Foundation for a New Faculty Award. |
| Record Number: | CaltechAUTHORS:HWAprl96 |
| Persistent URL: | http://resolver.caltech.edu/CaltechAUTHORS:HWAprl96 |
| Alternative URL: | http://dx.doi.org/10.1103/PhysRevLett.77.3049 |
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. |
| ID Code: | 4803 |
| Collection: | CaltechAUTHORS |
| Deposited By: | Archive Administrator |
| Deposited On: | 07 Sep 2006 |
| Last Modified: | 26 Dec 2012 09:01 |
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