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Aspect ratio independent etching of dielectrics

Hwang, Gyeong S. and Giapis, Konstantinos P. (1997) Aspect ratio independent etching of dielectrics. Applied Physics Letters, 71 (4). pp. 458-460. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:HWAapl97d

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Abstract

Monte Carlo simulations of pattern-dependent charging during oxide etching predict that the etch rate scaling with aspect ratio breaks down when surface discharge currents are significant. Under conditions of ion-limited etching and no inhibitor deposition, the etch depth depends on the maximum incident ion energy, reaction threshold, and surface discharge threshold, and is the same irrespective of the trench width (<= 0.5 µm).


Item Type:Article
Additional Information:©1997 American Institute of Physics. (Received 22 April 1997; accepted 27 May 1997) This material was based on work partially supported by an NSF Career Award to KPG (CTS-9623450).
Subject Keywords:etching; Monte Carlo methods; surface discharges
Record Number:CaltechAUTHORS:HWAapl97d
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:HWAapl97d
Alternative URL:http://dx.doi.org/10.1063/1.119578
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:4809
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:07 Sep 2006
Last Modified:26 Dec 2012 09:01

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