Hwang, Gyeong S. and Giapis, Konstantinos P. (1997) Prediction of multiple-feature effects in plasma etching. Applied Physics Letters, 70 (18). pp. 2377-2379. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:HWAapl97e
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Charging and topography evolution simulations during plasma etching of dense line-and-space patterns reveal that multiple-feature effects influence critically the etch profile characteristics of the various lines. By including neighboring lines, the simulation predicts a peculiar notching behavior, where the extent of notching varies with the location of the line. Feature-scale modeling can no longer be focused on individual features alone; "adjacency" effects are crucial for understanding and predicting the outcome of etching experiments at reduced device dimensions.
|Additional Information:||©1997 American Institute of Physics. (Received 13 January 1997; accepted 3 March 1997) This material was based upon work supported by an NSF Career Award to KFG (CTS-9623450).|
|Subject Keywords:||PLASMA; ETCHING; SIMULATION; SEMICONDUCTOR DEVICES; CHLORINE; SILICON; ELECTRIC CHARGES; SURFACE POTENTIAL; sputter etching; plasma simulation|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Archive Administrator|
|Deposited On:||07 Sep 2006|
|Last Modified:||26 Dec 2012 09:01|
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