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Prediction of multiple-feature effects in plasma etching

Hwang, Gyeong S. and Giapis, Konstantinos P. (1997) Prediction of multiple-feature effects in plasma etching. Applied Physics Letters, 70 (18). pp. 2377-2379. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:HWAapl97e

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Abstract

Charging and topography evolution simulations during plasma etching of dense line-and-space patterns reveal that multiple-feature effects influence critically the etch profile characteristics of the various lines. By including neighboring lines, the simulation predicts a peculiar notching behavior, where the extent of notching varies with the location of the line. Feature-scale modeling can no longer be focused on individual features alone; "adjacency" effects are crucial for understanding and predicting the outcome of etching experiments at reduced device dimensions.


Item Type:Article
Additional Information:©1997 American Institute of Physics. (Received 13 January 1997; accepted 3 March 1997) This material was based upon work supported by an NSF Career Award to KFG (CTS-9623450).
Subject Keywords:PLASMA; ETCHING; SIMULATION; SEMICONDUCTOR DEVICES; CHLORINE; SILICON; ELECTRIC CHARGES; SURFACE POTENTIAL; sputter etching; plasma simulation
Record Number:CaltechAUTHORS:HWAapl97e
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:HWAapl97e
Alternative URL:http://dx.doi.org/10.1063/1.118878
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:4810
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:07 Sep 2006
Last Modified:26 Dec 2012 09:01

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