Cahn, Robert W. (1986) Atomic transport in amorphous alloys: An introduction. Journal of Vacuum Science and Technology A, 4 (6). pp. 3071-3077. ISSN 0734-2101 http://resolver.caltech.edu/CaltechAUTHORS:CAHjvsta86
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The measurement of the diffusivities of metallic and metalloid species in amorphous alloys has necessitated the development of techniques capable of a resolution of a few nanometers over a total penetration depth of less than a micron. Various profiling techniques employing ion beams and the ultrasensitive multilayer technique are outlined. Generalities concerning the diffusion of different solutes in the same amorphous alloy or family of alloys, and the diffusion of the same solute in different amorphous alloys are presented, and the effect of solute concentration discussed. The role of amorphous alloys as diffusion barriers in microelectronic circuitry is outlined with emphasis on recent results. The influence of the nature of the substrate and metallic overlayer receives special attention. Barrier layers effective up to 700 °C have recently been made.
|Additional Information:||© 1986 American Vacuum Society (Received 11 April 1986; accepted 24 April 1986) I am grateful to the President and Provost of the California Institute of Technology for the award of a Fairchild Scholarship during the tenure of which this review was written. Thanks are due to Dr. B. Cantor, Dr. A. L. Greer, and Professor J. H. Perepezko for kindly providing preprints and reprints of recent work. I am happy to acknowledge that I have learned much from Professor M.-A. Nicolet and Professor W. L. Johnson.|
|Subject Keywords:||ATOM TRANSPORT; METALLIC GLASSES; DIFFUSION; DIFFUSION BARRIERS; MICROELECTRONICS; INTEGRATED CIRCUITS; SOLVENT PROPERTIES; DIFFUSIVITY; METALS; VERY HIGH TEMPERATURE|
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|Deposited On:||18 Sep 2006|
|Last Modified:||26 Dec 2012 09:03|
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