Bai, G. and Nicolet, M-A. and Mahan, John E. and Geib, Kent M. and Robinson, Gary Y. (1990) Radiation damage in ReSi2 by a MeV 4He beam. Applied Physics Letters, 57 (16). pp. 1657-1659. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:BAIapl90
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Epitaxial ReSi2 thin films grown on Si (100) substrates were analyzed at room temperature by MeV 4He backscattering and channeling spectrometry. The minimum yield of  axial channeling increases with increasing exposure of the ReSi2 sample to the analyzing He beam. This means that ReSi2 suffers irradiation damage induced by a MeV 4He beam. The damage in the film induced by a beam incident along a random direction is about one order of magnitude larger than that induced by a beam with an aligned incidence, indicating that the damage is mainly generated by elastic collisions of nuclei. The experimentally measured defect concentration produced at 300 K by a beam of random incidence is compared with the theoretically estimated one produced at 0 K in an amorphous target. The agreement is fairly good, suggesting that the defects are stable at room temperature.
|Additional Information:||Copyright © 1990 American Institute of Physics (Received 17 May 1990; accepted 16 August 1990) This letter is based upon work supported in part by the Semiconductor Research Corporation under contract No. 100-SJ-89 and by the National Science Foundation under grant No. DMR-8811795 at Caltech, by the US Army Research Office and the National Science Foundation through grant No. ECS-8514842 at Colorado State University and by the National Aeronautics and Space Administration through a Small Business Innovation Research contract with the Colorado Research Development Corporation. The authors gratefully acknowledge this support.|
|Subject Keywords:||RHENIUM SILICIDES; MEV RANGE 01–10; HELIUM IONS; ION CHANNELING; DAMAGE; PHYSICAL RADIATION EFFECTS; SILICON; MEDIUM TEMPERATURE; ULTRALOW TEMPERATURE; EXPERIMENTAL DATA; ELASTIC SCATTERING; BACKSCATTERING|
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|Deposited On:||20 Sep 2006|
|Last Modified:||26 Dec 2012 09:03|
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