Park, J. and Daraio, C. and Jin, S. and Bandaru, P. R. and Gaillard, J. and Rao, A. M. (2006) Three-way electrical gating characteristics of metallic Y-junction carbon nanotubes. Applied Physics Letters, 88 (24). Art. No. 243113. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:PARapl06
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Abstract
Y-junction based carbon nanotube (CNT) transistors exhibit interesting switching behaviors, and have the structural advantage that the electrical gate for current modulation can be formed by any of the three constituent branches. In this letter, we report on the gating characteristics of metallic Y-CNT morphologies. By measuring the output conductance and transconductance we conclude that the efficiency and gain depend on the branch diameter and is electric field controlled. Based on these principles, we propose a design for a Y-junction based CNT switching device, with tunable electrical properties.
| Item Type: | Article |
|---|---|
| Additional Information: | ©2006 American Institute of Physics (Received 3 February 2006; accepted 18 May 2006; published online 15 June 2006) The authors gratefully acknowledge support from the National Science Foundation (Grant No. ECS-05-08514) and the Office of Naval Research (Award No. N00014-06-1-0234). The authors also appreciate the use of facilities at the National Center for Electron Microscopy (NCEM) at the Lawrence Berkeley National Laboratory, Berkeley. |
| Subject Keywords: | carbon nanotubes; switching; electric admittance |
| Record Number: | CaltechAUTHORS:PARapl06 |
| Persistent URL: | http://resolver.caltech.edu/CaltechAUTHORS:PARapl06 |
| Alternative URL: | http://dx.doi.org/10.1063/1.2213013 |
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. |
| ID Code: | 5091 |
| Collection: | CaltechAUTHORS |
| Deposited By: | Archive Administrator |
| Deposited On: | 28 Sep 2006 |
| Last Modified: | 26 Dec 2012 09:03 |
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