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Control of carbon nanotube morphology by change of applied bias field during growth

Chen, L.-H. and AuBuchon, J. F. and Gapin, A. and Daraio, C. and Bandaru, P. and Jin, S. and Kim, D. W. and Yoo, I. K. and Wang, C. M. (2004) Control of carbon nanotube morphology by change of applied bias field during growth. Applied Physics Letters, 85 (22). pp. 5373-5375. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:CHEapl04

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Abstract

Carbon nanotube morphology has been engineered via simple control of applied voltage during dc plasma chemical vapor deposition growth. Below a critical applied voltage, a nanotube configuration of vertically aligned tubes with a constant diameter is obtained. Above the critical voltage, a nanocone-type configuration is obtained. The strongly field-dependent transition in morphology is attributed primarily to the plasma etching and decrease in the size of nanotube-nucleating catalyst particles. A two-step control of applied voltage allows a creation of dual-structured nanotube morphology consisting of a broad base nanocone (~200 nm dia.) with a small diameter nanotube (~7 nm) vertically emanating from the apex of the nanocone, which may be useful for atomic force microscopy.


Item Type:Article
Additional Information:©2004 American Institute of Physics (Received 8 July 2004; accepted 21 October 2004) The authors acknowledge the support of the work by University of California Discovery Fund under Grant No. ele02-10133/Jin, NSF NIRTs under Grant Nos. DMI-0210559 and DMI-0303790, and Lawrence Livermore National Laboratory under Grant No. MI-04-006.
Subject Keywords:carbon nanotubes; surface morphology; plasma CVD
Record Number:CaltechAUTHORS:CHEapl04
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:CHEapl04
Alternative URL:http://dx.doi.org/10.1063/1.1830081
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:5095
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:28 Sep 2006
Last Modified:26 Dec 2012 09:03

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