Wallace, Charles H. and Kim, Sang-Ho and Rose, Garry A. and Rao, Lin and Heath, James R. and Nicol, Malcolm and Kaner, Richard B. (1998) Solid-state metathesis reactions under pressure: A rapid route to crystalline gallium nitride. Applied Physics Letters, 72 (5). pp. 596-598. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:WALapl98
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High pressure chemistry has traditionally involved applying pressure and increasing temperature until conditions become thermodynamically favorable for phase transitions or reactions to occur. Here, high pressure alone is used as a starting point for carrying out rapid, self-propagating metathesis reactions. By initiating chemical reactions under pressure, crystalline phases, such as gallium nitride, can be synthesized which are inaccessible when initiated from ambient conditions. The single-phase gallium nitride made by metathesis reactions under pressure displays significant photoluminescence intensity in the blue/ultraviolet region. The absence of size or surface-state effects in the photoluminescence spectra show that the crystallites are of micron dimensions. The narrow lines of the x-ray diffraction patterns and scanning electron microscopy confirm this conclusion. Brightly luminescent thin films can be readily grown using pulsed laser deposition.
|Additional Information:||©1998 American Institute of Physics. Received 20 October 1997; accepted 7 December 1997. This work was supported by the National Science Foundation, the University of California Campus Laboratory Collaboration Program (M.N., R.B.K.), along with Guggenheim (R.B.K.), Packard, and Sloan (J.R.H., R.B.K.) Fellowships.|
|Subject Keywords:||gallium compounds; III-V semiconductors; wide band gap semiconductors; semiconductor growth; crystal growth; high-pressure effects|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Tony Diaz|
|Deposited On:||03 Oct 2006|
|Last Modified:||26 Dec 2012 09:03|
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