Tsai, C. J. and Atwater, H. A. and Vreeland, T. (1990) Strain modification in coherent Ge and SixGe1–x epitaxial films by ion-assisted molecular beam epitaxy. Applied Physics Letters, 57 (22). pp. 2305-2307. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:TSAapl90
See Usage Policy.
Use this Persistent URL to link to this item: http://resolver.caltech.edu/CaltechAUTHORS:TSAapl90
We have observed large changes in Ge and SixGe1–x layer strain during concurrent molecular beam epitaxial growth and low-energy bombardment. Layers are uniformly strained, coherent with the substrate, and contain no dislocations, suggesting that misfit strain is accommodated by free volume changes associated with injection of ion bombardment induced point defects. The dependence of layer strain on ion energy, ion-atom flux ratio, and temperature is consistent with the presence of a uniform dispersion of point defects at high concentration. Implications for distinguishing ion-surface interactions from ion-bulk interactions are discussed.
|Additional Information:||Copyright © 1990 American Institute of Physics (Received 25 May 1990; accepted 30 August 1990) The work was supported by the National Science Foundation P.Y.I.A. program (DMR-8958070) and the Materials Research Group program (DMR-8811795).|
|Subject Keywords:||GERMANIUM; GERMANIUM SILICIDES; GERMANIUM ALLOYS; SILICON ALLOYS; MOLECULAR BEAM EPITAXY; ION BEAMS; STRAINS; SUBSTRATES|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Archive Administrator|
|Deposited On:||03 Oct 2006|
|Last Modified:||26 Dec 2012 09:04|
Repository Staff Only: item control page