Tsaur, B. Y. and Nicolet, M-A. (1980) Reversible phase transformation in the Pd2Si-PdSi thin-film system. Applied Physics Letters, 37 (8). pp. 708-711. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:TSAapl80
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The thermal stability of thin PdSi films has been studied at temperatures ranging between 300 and 700 °C. The PdSi, when in contact with crystalline Si, transforms into Pd2Si and Si at temperatures of 500–700 °C, a process contrary to the equilibrium-phase diagram. The rate of transformation was found to depend on the structure and orientation of the Si. Upon heating above 750 °C, Pd2Si transforms back to PdSi. However, PdSi is stable against annealing when in contact with Pd2Si or an inert substrate SiO2. We propose that the decomposition of PdSi into Pd2Si and Si in the presence of crystalline Si is due to a lower interface energy of the Pd2Si-Si interface compared to that of the PdSi-Si interface.
|Additional Information:||Copyright © 1980 American Institute of Physics Received 9 June 1980; accepted for publication 11 July 1980 The authors are indebted to Dr. M. Wittmer (BBC, Switzerland) for bringing this phenomenon to our attention. We would also like to thank Dr. W. L. Johnson, Dr. S. S. Lau, and Dr. J. W. Mayer (Caltech) for their helpful discussions; T. Shibata (Stanford University) for providing the laser-induced Pd/Si samples; and R. Fernandez, D. Tonn, and R. Gorris for competent technical assistance. This research was supported in part by the Office of Naval Research (L. R. Cooper).|
|Subject Keywords:||PHASE TRANSFORMATIONS; PALLADIUM SILICIDES; FILMS; STABILITY; MEDIUM TEMPERATURE; HIGH TEMPERATURE; EQUILIBRIUM; PHASE DIAGRAMS; ORIENTATION; VERY HIGH TEMPERATURE; ANNEALING; SUBSTRATES; DECOMPOSITION; CRYSTALS; SILICON OXIDES|
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|Deposited On:||03 Oct 2006|
|Last Modified:||26 Dec 2012 09:04|
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