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Sequence of phase formation in planar metal-Si reaction couples

Tsaur, B. Y. and Lau, S. S. and Mayer, J. W. and Nicolet, M-A. (1981) Sequence of phase formation in planar metal-Si reaction couples. Applied Physics Letters, 38 (11). pp. 922-924. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:TSAapl81

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Abstract

A correlation is found between the sequence of phase formation in thin-film metal-Si interactions and the bulk equilibrium phase diagram. After formation of the first silicide phase, which generally follows the rule proposed by Walser and Bené, the next phase formed at the interface between the first phase and the remaining element (Si or metal) is the nearest congruently melting compound richer in the unreacted element. If the compounds between the first phase and the remaining element are all noncongruently melting compounds (such as peritectic or peritectoid phases), the next phase formed is that with the smallest temperature difference between the liquidus curve and the peritectic (or peritectoid) point.


Item Type:Article
Additional Information:Copyright © 1981 American Institute of Physics Received 24 November 1980; accepted for publication 29 January 1981 We thank R. Fernandez and R. Gorris (Caltech) for their assistance, and the Office of Naval Research for financial support (L. R. Cooper and G. B. Wright).
Subject Keywords:CHEMICAL REACTIONS; PHASE TRANSFORMATIONS; METALS; SILICON; CORRELATIONS; INTERACTIONS; FILMS; EQUILIBRIUM; SILICIDES; MATHEMATICAL MODELS; PHASE DIAGRAMS; INTERFACES; MELTING; PLATINUM; PALLADIUM; GERMANIUM; GOLD; ALUMINIUM
Record Number:CaltechAUTHORS:TSAapl81
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:TSAapl81
Alternative URL:http://dx.doi.org/10.1063/1.92183
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:5163
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:03 Oct 2006
Last Modified:26 Dec 2012 09:04

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