Tsaur, B. Y. and Matteson, S. and Chapman, G. and Liau, Z. L. and Nicolet, M-A. (1979) Depth dependence of atomic mixing by ion beams. Applied Physics Letters, 35 (10). pp. 825-828. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:TSAapl79
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Ion backscattering spectrometry has been used to investigate the depth dependence of atomic mixing induced by ion beams. Samples consisting of a thin Pt (or Si) marker a few tens of angstroms thick buried at different depths in a deposited Si (or Pt) layer were bombarded with Xe+ of 300 keV at 2×10^16 cm^–2 dose and Ar+ of 150 keV at 5×10^15cm^–2 dose. Significant spreading of the marker was observed as a result of ion irradiation. The amount of spreading was measured as a function of depth of the marker, which was then compared with the deposited energy distribution. Measurements of this kind promise new insight into the nature of the interaction between ion beams and solids.
|Additional Information:||Copyright © 1979 American Institute of Physics Received 6 July 1979; accepted for publication 4 September 1979 The authors are grateful to J. W. Mayer, D. K. Brice, D. A. Thompson, and I. Golecki for their interest and helpful discussions. They also wish to thank J. Mallory for his skillful sample preparation, and the financial assistance provided by the Office of Naval Research (L. R. Cooper).|
|Subject Keywords:||DEPTH DOSE DISTRIBUTIONS; ION BEAMS; ATOMS; MIXING; BACKSCATTERING; SPECTROMETRY; THICKNESS; LAYERS; IRRADIATION; ARGON IONS; XENON IONS; SPACE DEPENDENCE; ENERGY SPECTRA; PLATINUM; SILICON; ION COLLISIONS|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Archive Administrator|
|Deposited On:||03 Oct 2006|
|Last Modified:||26 Dec 2012 09:04|
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