Koren, U. and Chen, T. R. and Harder, C. and Hasson, A. and Yu, K. L. and Chiu, L. C. and Margalit, S. and Yariv, A. (1983) InGaAsP/InP undercut mesa laser with planar polyimide passivation. Applied Physics Letters, 42 (5). pp. 403-405. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:KORapl83a
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An undercut mesa laser is fabricated on an n + -InP substrate using a single step liquid phase epitaxy growth process and a planar structure is obtained by using a polyimide filling layer. The lasers operate at fundamental transverse mode due to a scattering loss mechanism. Threshold currents of 18 mA and stable single transverse mode operating at high currents are obtained.
|Additional Information:||Copyright © 1983 American Institute of Physics (Received 1 November 1982; accepted 23 November 1982) This work was supported by the Office of Naval Research and by the Air Force Office of Scientific Research.|
|Subject Keywords:||indium arsenides; gallium arsenides; indium phosphides; gallium phosphides; semiconductor lasers; experimental data; polymers; imides; passivation; configuration; n–type conductors; liquids; epitaxy; crystal growth; oscillation modes; scattering; energy losses; threshold current|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Archive Administrator|
|Deposited On:||04 Oct 2006|
|Last Modified:||26 Dec 2012 09:04|
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