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InGaAsP/InP undercut mesa laser with planar polyimide passivation

Koren, U. and Chen, T. R. and Harder, C. and Hasson, A. and Yu, K. L. and Chiu, L. C. and Margalit, S. and Yariv, A. (1983) InGaAsP/InP undercut mesa laser with planar polyimide passivation. Applied Physics Letters, 42 (5). pp. 403-405. ISSN 0003-6951.

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An undercut mesa laser is fabricated on an n + -InP substrate using a single step liquid phase epitaxy growth process and a planar structure is obtained by using a polyimide filling layer. The lasers operate at fundamental transverse mode due to a scattering loss mechanism. Threshold currents of 18 mA and stable single transverse mode operating at high currents are obtained.

Item Type:Article
Additional Information:Copyright © 1983 American Institute of Physics (Received 1 November 1982; accepted 23 November 1982) This work was supported by the Office of Naval Research and by the Air Force Office of Scientific Research.
Subject Keywords:indium arsenides; gallium arsenides; indium phosphides; gallium phosphides; semiconductor lasers; experimental data; polymers; imides; passivation; configuration; n–type conductors; liquids; epitaxy; crystal growth; oscillation modes; scattering; energy losses; threshold current
Record Number:CaltechAUTHORS:KORapl83a
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:5176
Deposited By: Archive Administrator
Deposited On:04 Oct 2006
Last Modified:26 Dec 2012 09:04

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