Tandon, J. L. and Madok, J. H. and Leybovich, I. S. and Bai, G. and Nicolet, M-A. (1989) Sequential nature of damage annealing and activation in implanted GaAs. Applied Physics Letters, 54 (5). pp. 448-450. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:TANapl89
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Rapid thermal processing of implanted GaAs reveals a definitive sequence in the damage annealing and the electrical activation of ions. Removal of implantation-induced damage and restoration of GaAs crystallinity occurs first. Irrespective of implanted species, at this stage the GaAs is n-type and highly resistive with almost ideal values of electron mobility. Electrical activation is achieved next when, in a narrow anneal temperature window, the material becomes n- or p-type, or remains semi-insulating, commensurate to the chemical nature of the implanted ion. Such a two-step sequence in the electrical doping of GaAs by ion implantation may be unique of GaAs and other compound semiconductors.
|Additional Information:||Copyright © 1989 American Institute of Physics. (Received 10 October 1988; accepted 18 November 1988) At McDonnell Douglas, this work was supported by internal research and development funds, and at Caltech by the National Science Foundatio, MRG grant DMR-8421119. We are indebted to E. Haller and J. Beeman, University of California Lawrence Berkeley Laboratory, for educating us on ion implantation effects in Ge. We also gratefully acknowledge their contribution in providing us P-implanted ultrapure Ge samples. At McDonnell Douglas, we thank M. C. Stonage for her assistance with implantations.|
|Subject Keywords:||ANNEALING; DAMAGE; ION IMPLANTATION; ELECTRON MOBILITY; ACTIVATION ENERGY; GALLIUM ARSENIDES; SILICON IONS; MAGNESIUM IONS; ARGON IONS; CRYSTAL STRUCTURE|
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|Deposited On:||05 Oct 2006|
|Last Modified:||26 Dec 2012 09:04|
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