Best, J. S. and McCaldin, J. O. and McGill, T. C. and Mead, C. A. and Mooney, J. B. (1976) HgSe, a highly electronegative stable metallic contact for semiconductor devices. Applied Physics Letters, 29 (7). pp. 433-434. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:BESapl76
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Schottky barriers formed by the highly electronegative substance HgSe on n-ZnS and on n-ZnSe have been characterized by capacitance-voltage and photoresponse measurements. The barriers are about 0.5 eV greater than Au barriers on these n-type substrates. HgSe contacts are stable under ambient conditions and are easily fabricated, making them attractive for device use.
|Additional Information:||Copyright © 1976 American Institute of Physics Received 17 June 1976|
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|Deposited On:||06 Oct 2006|
|Last Modified:||26 Dec 2012 09:04|
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