Best, J. S. and McCaldin, J. O. and McGill, T. C. and Mead, C. A. and Mooney, J. B. (1976) HgSe, a highly electronegative stable metallic contact for semiconductor devices. Applied Physics Letters, 29 (7). pp. 433-434. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:BESapl76
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Abstract
Schottky barriers formed by the highly electronegative substance HgSe on n-ZnS and on n-ZnSe have been characterized by capacitance-voltage and photoresponse measurements. The barriers are about 0.5 eV greater than Au barriers on these n-type substrates. HgSe contacts are stable under ambient conditions and are easily fabricated, making them attractive for device use.
| Item Type: | Article |
|---|---|
| Additional Information: | Copyright © 1976 American Institute of Physics Received 17 June 1976 |
| Record Number: | CaltechAUTHORS:BESapl76 |
| Persistent URL: | http://resolver.caltech.edu/CaltechAUTHORS:BESapl76 |
| Alternative URL: | http://dx.doi.org/10.1063/1.89109 |
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. |
| ID Code: | 5272 |
| Collection: | CaltechAUTHORS |
| Deposited By: | Archive Administrator |
| Deposited On: | 06 Oct 2006 |
| Last Modified: | 26 Dec 2012 09:04 |
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