Nakamura, M. and Aiki, K. and Umeda, Jun-ichi and Yariv, A. and Yen, H. W. and Morikawa, T. (1974) GaAs[Single Bond]Ga1–xAlxAs double-heterostructure distributed-feedback diode lasers. Applied Physics Letters, 25 (9). pp. 487-488. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:NAKapl74b
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We report laser oscillation at 80–100°K in electrically pumped GaAs[Single Bond]Ga1–xAlxAs double-heterostructure distributed-feedback diode lasers. The feedback for laser oscillation was provided by a corrugated interface between the active GaAs layer and the p-Ga1–xAlxAs layer. The lowest threshold current density was 2.5 kA/cm^2 in pulsed operation. The wavelength of laser emission was 8112 Å at 82°K with a half-width of less than 0.3 Å. The temperature dependence of the laser wavelength was found to be smaller than that of the conventional Fabry-Perot laser.
|Additional Information:||©1974 American Institute of Physics (Received 8 July 1974) The authors would like to thank Dr. Y. Ohtomo and Dr. O. Nakada of Central Research Laboratory, Hitachi, Ltd., for their continuous encouragement; Y. Sasaki of the same laboratory for his help in fabricating the diodes; and A. Gover of California Institute of Technology for his helpful discussions.|
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|Deposited On:||09 Oct 2006|
|Last Modified:||26 Dec 2012 09:04|
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