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Liquid phase epitaxy of GaAlAs on GaAs substrates with fine surface corrugations

Nakamura, M. and Aiki, K. and Umeda, J. and Yariv, A. and Yen, H. W. and Morikawa, T. (1974) Liquid phase epitaxy of GaAlAs on GaAs substrates with fine surface corrugations. Applied Physics Letters, 24 (10). pp. 466-468. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:NAKapl74a

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Abstract

Liquid phase epitaxy of GaAlAs was performed on GaAs fine surface corrugations. By optimizing the growth conditions, GaAlAs layers were grown successfully with only minimal meltback.


Item Type:Article
Additional Information:©1974 American Institute of Physics (Received 18 February 1974) The authors would like to thank Dr. Y. Otomo and Dr. O. Nakada of Central Research Laboratory, Hitachi Ltd., for their support of this work, T. Kajimura of the same laboratory and K. Evans of the California Institute of Technology for SEM photography, and A. Gover of the California Institute of Technology for helpful discussions.
Record Number:CaltechAUTHORS:NAKapl74a
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:NAKapl74a
Alternative URL:http://dx.doi.org/10.1063/1.1655014
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:5280
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:09 Oct 2006
Last Modified:26 Dec 2012 09:04

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