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cw operation of distributed-feedback GaAs-GaAlAs diode lasers at temperatures up to 300 K

Nakamura, M. and Aiki, K. and Umeda, J. and Yariv, A. (1975) cw operation of distributed-feedback GaAs-GaAlAs diode lasers at temperatures up to 300 K. Applied Physics Letters, 27 (7). pp. 403-405. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:NAKapl75

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Abstract

Distributed-feedback GaAs-GaAlAs diode lasers with separate optical and carrier confinement have been successfully operated under dc bias up to room temperature. They lased in a single longitudinal mode with a threshold current density of 0.94 kA/cm^2 at 170 K and 3.5 kA/cm^2 at 300 K.


Item Type:Article
Additional Information:Copyright © 1975 American Institute of Physics Received 17 June 1975; in final form 22 July 1975 The authors would like to thank Dr. Y. Otomo and Dr. O. Nakada of the Central Research Laboratory, Hitachi, Ltd., for their support in this work. They are also grateful to S. Yamashita of the same laboratory for his extensive assistance in diode preparation and scanning microscope measurements.
Record Number:CaltechAUTHORS:NAKapl75
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:NAKapl75
Alternative URL:http://dx.doi.org/10.1063/1.88492
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:5287
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:09 Oct 2006
Last Modified:26 Dec 2012 09:04

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