Salzman, J. and Venkatesan, T. and Margalit, S. and Yariv, A. (1985) Double heterostructure lasers with facets formed by a hybrid wet and reactive-ion-etching technique. Journal of Applied Physics, 57 (8). pp. 2948-2950. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:SALjap85
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Double heterostructure lasers were fabricated in which one of the laser facets was produced by a hybrid wet and reactive-ion-etching technique. This technique is suitable for GaAs/GaAlAs heterostructure lasers and utilizes the selectivity of the plasma in preferentially etching GaAs over GaAlAs. Lasers fabricated by this technique are compatible with optoelectronic integration and have threshold currents and quantum efficiency comparable to lasers with both mirrors formed by cleaving. The technique enables the use of relatively higher pressures of noncorrosive gases in the etch plasma resulting in smoother mirror surfaces and further eliminates the nonreproducibility inherent in the etching of GaAlAs layers.
|Additional Information:||Copyright © 1985 American Institute of Physics (Received 21 September 1984; accepted 4 December 1984) This research is supported by grants from the National Science Foundation and the Office of Naval Research. We would like to thank E. Kapon and Z. Rav-Noy for advice in the fabrication techniques. J. Salzman would like to acknowledge the support of the Bantrell post-doctoral fellowship.|
|Subject Keywords:||SEMICONDUCTOR LASERS; ETCHING; FABRICATION; HETEROJUNCTIONS; GALLIUM ARSENIDES; ALUMINIUM ARSENIDES; THRESHOLD CURRENT; QUANTUM EFFICIENCY; LASER MIRRORS; EXPERIMENTAL DATA; DH LASERS|
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|Deposited By:||Archive Administrator|
|Deposited On:||10 Oct 2006|
|Last Modified:||26 Dec 2012 09:05|
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