CaltechAUTHORS
  A Caltech Library Service

Reversible Metal-Insulator Transition in Ordered Metal Nanocrystal Monolayers Observed by Impedance Spectroscopy

Markovich, Gil and Collier, Charles P. and Heath, James R. (1998) Reversible Metal-Insulator Transition in Ordered Metal Nanocrystal Monolayers Observed by Impedance Spectroscopy. Physical Review Letters, 80 (17). pp. 3807-3810. ISSN 0031-9007. http://resolver.caltech.edu/CaltechAUTHORS:MARprl98b

[img]
Preview
PDF
See Usage Policy.

101Kb

Use this Persistent URL to link to this item: http://resolver.caltech.edu/CaltechAUTHORS:MARprl98b

Abstract

Low frequency impedance spectroscopy was applied on a Langmuir monolayer of alkylthiol passivated 35 Å diameter silver quantum dots, as a function of interparticle separation distance. As interparticle spacing decreases below 30% of particle diameter, a reduction in interparticle charge tunneling time is observed. On further compression, the complex impedance of the films undergoes a transition from a parallel RC equivalent circuit to an inductive circuit. Optical reflectance changes in the films are consistent with the deduced metal-insulator transition.


Item Type:Article
Additional Information:©1998 The American Physical Society Received 3 November 1997 We thank R.S. Williams and Hewlett Packard Corporation for loan of the LCR meter used in these experiments. We acknowledge helpful discussions with Steve Kivelson, Rich Saykally, and Alex Bratkovski. J.R.H. and G.M. acknowledge support from an NSF-NYI grant. C.P.C. acknowledges support from NSF Grant No. CHE-9424482.
Record Number:CaltechAUTHORS:MARprl98b
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:MARprl98b
Alternative URL:http://dx.doi.org/10.1103/PhysRevLett.80.3807
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:5362
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:13 Oct 2006
Last Modified:26 Dec 2012 09:05

Repository Staff Only: item control page