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Evidence for virtual-phonon exchange in semiconductor heterostructures

Gramila, T. J. and Eisenstein, J. P. and MacDonald, A. H. and Pfeiffer, L. N. and West, K. W. (1993) Evidence for virtual-phonon exchange in semiconductor heterostructures. Physical Review B, 47 (19). pp. 12957-12960. ISSN 0163-1829. http://resolver.caltech.edu/CaltechAUTHORS:GRAprb93

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Abstract

Measurements of frictional drag between adjacent electron gases in double quantum wells provide strong evidence for phonon-mediated electron-electron interactions. These interactions, which dominate the contribution from simple Coulomb scattering at layer spacings larger than a few hundred Å, are between 20 and 100 times stronger than expected for sequential emission and absorption of real phonons. The observed range of the interactions, substantially smaller than the acoustic phonon mean free path, points to a novel electron scattering mechanism involving virtual-phonon exchange.


Item Type:Article
Additional Information:©1993 The American Physical Society. Received 15 July 1992. We thank H. L. Stormer and A. A. Grinberg for useful discussions.
Subject Keywords:ELECTRON; HETEROLAYER; MOBILITY
Record Number:CaltechAUTHORS:GRAprb93
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:GRAprb93
Alternative URL:http://dx.doi.org/10.1103/PhysRevB.47.12957
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:5394
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:16 Oct 2006
Last Modified:26 Dec 2012 09:05

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