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Fermi Level Position at Semiconductor Surfaces

Mead, C. A. and Spitzer, W. G. (1963) Fermi Level Position at Semiconductor Surfaces. Physical Review Letters, 10 (11). pp. 471-472. ISSN 0031-9007. http://resolver.caltech.edu/CaltechAUTHORS:20150128-164226292

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Abstract

There have been several recent reports of barrier height studies on metal-semiconductor interfaces. Metals of widely different work functions evaporated onto Si and GaAs surfaces indicated that in each case the energy difference between the semiconductor conduction band edge and Fermi level at the interface,φ_(Bn), was essentially independent of the metal, which indicates that the Fermi level is fixed by surface states. In the present work barrier height measurements have been made on a number of zinc-blende semiconductors to determine (a) if the barriers are in all cases determined by surface states, and (b) the relation between the Fermi energy at the interface and the band gap E_g.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1103/PhysRevLett.10.471DOIArticle
http://journals.aps.org/prl/abstract/10.1103/PhysRevLett.10.471PublisherArticle
Additional Information:© 1963. American Physical Society. Received 2 May 1963. Work supported in part by the U. S. Office of Naval Research and the International Telephone and Telegraph Company.
Funders:
Funding AgencyGrant Number
Office of Naval Research (ONR)UNSPECIFIED
International Telephone and Telegraph CompanyUNSPECIFIED
Record Number:CaltechAUTHORS:20150128-164226292
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20150128-164226292
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:54208
Collection:CaltechAUTHORS
Deposited By: Kristin Buxton
Deposited On:31 Jan 2015 23:21
Last Modified:31 Jan 2015 23:21

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