Ohsaka, K. and Chung, S. K. and Rhim, W. K. and Holzer, J. C. (1997) Densities of Si determined by an image digitizing technique in combination with an electrostatic levitator. Applied Physics Letters, 70 (4). pp. 423-425. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:OHSapl97b
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We have determined the densities of Si in the liquid, rhol(T), and solid, rhos(T), states as a function of temperature, T, by employing an image digitizing technique and numerical calculation methods in combination with an electrostatic levitator. The obtained density data can be fitted with the following equations: rhol(T) = rhol(Tm) – 1.71 × 10^–4(T – Tm) – 1.61 × 10^–7(T – Tm)2(g/cm^3); rhos(T) = rhos(Tm) – 2.63 × 10^–5(T – Tm)(g/cm^3),where Tm is the melting point, 1687 K, and rhol(Tm) and rhos(Tm) are 2.580 and 2.311 (g/cm^3), respectively. The error involved in the determination is estimated to be ±0.006 (g/cm3). The rhol(T) value smoothly varies through Tm and does not indicate a reported anomalous density variation. The rhol(Tm) value is 2% larger than the literature value and the coefficient of the linear temperature dependence is approximately half of a reported value. The rhos(Tm) value closely agrees with the literature value.
|Additional Information:||©1997 American Institute of Physics. (Received 23 September 1996; accepted 22 November 1996) This work represents one phase of research carried out at the Jet Propulsion Laboratory, California Institute of Technology, under contract with the National Aeronautics and Space Administration.|
|Subject Keywords:||SILICON; DENSITY; PHASE TRANSFORMATIONS; MELTING; ELECTROSTATICS; LEVITATION; DATA; TEMPERATURE DEPENDENCE; density measurement; numerical analysis|
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|Deposited On:||17 Oct 2006|
|Last Modified:||11 Dec 2014 00:29|
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