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Physical model for burst noise in semiconductor devices

Hsu, S. T. and Whittier, R. J. and Mead, C. A. (1970) Physical model for burst noise in semiconductor devices. Solid-State Electronics, 13 (7). pp. 1055-1071. ISSN 0038-1101. http://resolver.caltech.edu/CaltechAUTHORS:20150212-155102555

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Abstract

A physical model for burst noise in p−n junction devices is presented. It is proposed that burst noise results when the current through a defect is modulated by a change in the charge state of a single recombination-generation center located adjacent to the defect. The burst noise amplitude and pulse widths are related to the basic properties of the recombination-generation center and the defect. The model leads to a simple interpretation of the equivalent circuit for diodes which exhibit this type of noise.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1016/0038-1101(70)90102-4DOIArticle
http://www.sciencedirect.com/science/article/pii/0038110170901024PublisherArticle
Additional Information:© 1970 Pergamon Press. Received 10 November 1969.
Record Number:CaltechAUTHORS:20150212-155102555
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20150212-155102555
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:54795
Collection:CaltechAUTHORS
Deposited By: Kristin Buxton
Deposited On:13 Feb 2015 03:50
Last Modified:13 Feb 2015 03:50

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