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Physics of Interfaces

Mead, C. A. (1969) Physics of Interfaces. In: Ohmic contacts to semiconductors. Electrochemical Society , New York, NY, pp. 3-16. http://resolver.caltech.edu/CaltechAUTHORS:20150223-144739659

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Abstract

It has long been known that when a metal is placed in contact with a semiconductor a rectifying contact often results. This rectification is a result of an energy barrier between the metal and the semiconductor. In order to form a nonrectifying or ohmic contact, two general approaches can be applied: either (1) the barrier energy can be reduced to a low enough value that the thermally excited current over the barrier is large enough for the application involved or (2) the semiconductor can be doped to a high carrier density to allow quantum mechanical tunneling to take place. The physical principles of these processes are discussed in this article.


Item Type:Book Section
Additional Information:© 1969 Electrochemical Society. Updated version April 1, 2016.
Record Number:CaltechAUTHORS:20150223-144739659
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20150223-144739659
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:55116
Collection:CaltechAUTHORS
Deposited By: Kristin Buxton
Deposited On:23 Feb 2015 22:52
Last Modified:01 Apr 2016 20:42

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