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Low-temperature ion beam mixing of Pt and Si markers in Ge

Kim, Sung-Joon and Nicolet, M-A. and Averback, R. S. and Baldo, P. (1985) Low-temperature ion beam mixing of Pt and Si markers in Ge. Applied Physics Letters, 46 (2). pp. 154-156. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:KIMapl85

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Abstract

The mixing of Pt and Si marker atoms in Ge during 750-keV Xe irradiation was measured at temperatures between 6 and 500 K. The low-temperature measurements show that the mixing parameter for Pt is nearly twice that for Si. This result is in strong contradiction to the collisional theory of ion beam mixing. A weak temperature dependence in the mixing is found for both markers.


Item Type:Article
Additional Information:Copyright © 1985 American Institute of Physics (Received 26 March 1984; accepted 24 October 1984) This work was supported by the U.S. Department of Energy.
Subject Keywords:ION COLLISIONS; DIFFUSION; MIXING; PLATINUM; SILICON; GERMANIUM; IMPURITIES; ATOM TRANSPORT; TEMPERATURE DEPENDENCE; PHYSICAL RADIATION EFFECTS; KEV RANGE 100–1000
Record Number:CaltechAUTHORS:KIMapl85
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:KIMapl85
Alternative URL:http://dx.doi.org/10.1063/1.95719
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:5565
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:25 Oct 2006
Last Modified:26 Dec 2012 09:13

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