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Electro-optic characteristics of CdTe at 3.39 and 10.6 µ

Kiefer, James E. and Yariv, Amnon (1969) Electro-optic characteristics of CdTe at 3.39 and 10.6 µ. Applied Physics Letters, 15 (1). pp. 26-27. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:KIEapl69

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Abstract

The physical characteristics of high resistivity CdTe which are relevant to its use for electro-optic modulation have been investigated at 3.39 and 10.6 µ. The unclamped electro-optic characteristic n0^3r41 of CdTe was found to be 12 × 10^–11 m/V and the absorption coefficient is 0.006 cm^–1. Our measurements indicate that CdTe will be a very important material for electro-optic modulation in the infrared.


Item Type:Article
Additional Information:©1969 The American Institute of Physics (Received 8 May 1969) The CdTe samples were grown by Nancy Kyle and Robert Walker of the Chemical Physics Department of the Hughes Research Laboratories. The absorption measurements were made by J. Comly of the California Institute of Technology.
Record Number:CaltechAUTHORS:KIEapl69
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:KIEapl69
Alternative URL:http://dx.doi.org/10.1063/1.1652829
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:5594
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:25 Oct 2006
Last Modified:26 Dec 2012 09:13

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