Kim, S.-H. and Wolters, R. H. and Heath, J. R. (1996) Photophysics of size-selected InP nanocrystals: Exciton recombination kinetics. Journal of Chemical Physics, 105 (18). pp. 7957-7963. ISSN 0021-9606. http://resolver.caltech.edu/CaltechAUTHORS:KIMjcp96
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We report here on the size-dependent kinetics of exciton recombination in a III–V quantum dot system, InP. The measurements reported include various frequency dependent quantum yields as a function of temperature, frequency dependent luminescence decay curves, and time-gated emission spectra. This data is fit to a three-state quantum model which has been previously utilized to explain photophysical phenomena in II–VI quantum dots. The initial photoexcitation is assumed to place an electron in a (delocalized) bulk conduction band state. Activation barriers for trapping and detrapping of the electron to surface states, as well as activation barriers for surface-state radiationless relaxation processes are measured as a function of particle size. The energy barrier to detrapping is found to be the major factor limiting room temperature band-edge luminescence. This barrier increases with decreasing particle size. For 30 Å particles, this barrier is found to be greater than 6 kJ/mol—a barrier which is more than an order of magnitude larger than that previously found for 32 Å CdS nanocrystals.
|Additional Information:||©1996 American Institute of Physics. (Received 17 June 1996; accepted 2 August 1996) This work was supported by the Office of Naval Research, Order No. N00014-95-F-0099 and by the Director, Office of Energy Research, Office of Basic Energy Research, Division of Materials Sciences, of the U.S. Dept. of Energy Under Contract No. DE-AC03-76SF00098. J.R.H. acknowledges support from the David and Lucile Packard Foundation.|
|Subject Keywords:||INDIUM PHOSPHIDES; PHOTOLUMINESCENCE; FREQUENCY DEPENDENCE; TEMPERATURE DEPENDENCE; EXCITONS; EXCITED STATES; PARTICLE SIZE; QUANTUM DOTS|
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|Deposited By:||Archive Administrator|
|Deposited On:||25 Oct 2006|
|Last Modified:||26 Dec 2012 09:13|
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