CaltechAUTHORS
  A Caltech Library Service

Measurement of band offsets in Si/Si1–xGex and Si/Si1–x–yGexCy heterojunctions

Stein, B. L. and Yu, E. T. and Croke, E. T. and Hunter, A. T. and Laursen, T. and Bair, A. E. and Mayer, J. W. and Ahn, C. C. (1997) Measurement of band offsets in Si/Si1–xGex and Si/Si1–x–yGexCy heterojunctions. Journal of Vacuum Science and Technology B, 15 (4). pp. 1108-1111. ISSN 1071-1023. http://resolver.caltech.edu/CaltechAUTHORS:STEjvstb97

[img]
Preview
PDF
See Usage Policy.

106Kb

Use this Persistent URL to link to this item: http://resolver.caltech.edu/CaltechAUTHORS:STEjvstb97

Abstract

Realization of group IV heterostructure devices requires the accurate measurement of the energy band offsets in Si/Si1–xGex and Si/Si1–x–yGexCy heterojunctions. Using admittance spectroscopy, we have measured valence-band offsets in Si/Si1–xGex heterostructures and conduction-band and valence-band offsets in Si/Si1–x–yGexCy heterostructures grown by solid-source molecular-beam epitaxy. Measured Si/Si1–xGex valence-band offsets were in excellent agreement with previously reported values. For Si/Si1–x–yGexCy our measurements yielded a conduction-band offset of 100 ± 11 meV for a n-type Si/Si0.82Ge0.169C0.011 heterojunction and valence-band offsets of 118 ± 12 meV for a p-type Si/Si0.79Ge0.206C0.004 heterojunction and 223 ± 20 meV for a p-type Si/Si0.595Ge0.394C0.011 heterojunction. Comparison of our measured band offsets with previously reported measurements of energy band gaps in Si1–x–yGexCy and Si1–yCy alloy layers indicates that the band alignment is type I for the compositions we have studied and that our measured band offsets are in quantitative agreement with these previously reported results.


Item Type:Article
Additional Information:©1997 American Vacuum Society. (Received 12 January 1997; accepted 3 April 1997) The authors would like to acknowledge support from DARPA MDA972-95-3-0047 for work at UCSD, HRL, and ASU, and from ONR Grant No. N00014-95-I-0996 for work at UCSD. E.T.Y. would like to acknowledge receipt of a Sloan Research Fellowship. Two of the authors, B.L.S. and E.T.Y., would also like to thank S.S. Lau for part of the equipment used in this work.
Subject Keywords:semiconductor heterojunctions; semiconductor materials; elemental semiconductors; silicon; Ge-Si alloys
Record Number:CaltechAUTHORS:STEjvstb97
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:STEjvstb97
Alternative URL:http://dx.doi.org/10.1116/1.589422
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:5699
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:28 Oct 2006
Last Modified:26 Dec 2012 09:14

Repository Staff Only: item control page