Nanometer-scale GaAs clusters from organometallic precursors

Sercel, Peter C. and Saunders, Winston A. and Atwater, Harry A. and Vahala, Kerry J. and Flagan, Richard C. (1992) Nanometer-scale GaAs clusters from organometallic precursors. Applied Physics Letters, 61 (6). pp. 696-698. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:SERapl92

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Abstract

We report the synthesis of crystalline nanometer-scale GaAs clusters by homogeneous vapor-phase nucleation from organometallic precursors. Cluster synthesis is performed in a hot wall organometallic vapor-phase epitaxy reactor at atmospheric pressure. High resolution transmission electron microscopy studies reveal that the aerosol produced is composed of highly faceted single crystal GaAs particles in the 10–20 nm range. The influence of growth temperature and reactant concentration on cluster morphology is discussed.

Item Type:	Article
Additional Information:	Copyright © 1992 American Institute of Physics. Received: 23 March 1992; accepted: 26 May 1992. This work was supported by NSF Grant No. CTS-8912328 and the Powell Foundation. PCS acknowledges support by the ATT Foundation.
Subject Keywords:	GALLIUM ARSENIDES; MICROPARTICLES; SOLID CLUSTERS; GROWTH; VAPOR PHASE EPITAXY; SYNTHESIS; ATMOSPHERIC PRESSURE; TRANSMISSION ELECTRON MICROSCOPY; MORPHOLOGY; TEMPERATURE EFFECTS; CHEMICAL COMPOSITION; CHEMICAL REACTIONS; REACTION KINETICS
Record Number:	CaltechAUTHORS:SERapl92
Persistent URL:	http://resolver.caltech.edu/CaltechAUTHORS:SERapl92
Alternative URL:	http://dx.doi.org/10.1063/1.107825
Usage Policy:	No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:	5718
Collection:	CaltechAUTHORS
Deposited By:	Lindsay Cleary
Deposited On:	30 Oct 2006
Last Modified:	26 Dec 2012 09:14

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