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Monolithic integration of an injection laser and a metal semiconductor field effect transistor

Ury, I. and Margalit, S. and Yust, M. and Yariv, A. (1979) Monolithic integration of an injection laser and a metal semiconductor field effect transistor. Applied Physics Letters, 34 (7). pp. 430-431. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:URYapl79

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Abstract

A new laser structure, the "T-laser", has been monolithically integrated with a MESFET on a semi-insulating GaAs substrate. Integration is achieved by means of a compatible structure in which the optically active layer of the laser also serves as the electrically active layer of the MESFET. Direct modulation of the laser by means of the transistor is demonstrated.


Item Type:Article
Additional Information:Copyright © 1979 American Institute of Physics Received 4 December 1978; accepted for publication 22 January 1979 Research supported by the Office of Naval Research and the National Science Foundation.
Subject Keywords:SEMICONDUCTOR LASERS; FABRICATION; FIELD EFFECT TRANSISTORS; GALLIUM ARSENIDES; SUBSTRATES; STRUCTURES; OPTICAL ACTIVITY; LAYERS; MODULATION; TRANSISTORS
Record Number:CaltechAUTHORS:URYapl79
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:URYapl79
Alternative URL:http://dx.doi.org/10.1063/1.90824
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:5754
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:31 Oct 2006
Last Modified:26 Dec 2012 09:14

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