Jones, J. T. and Croke, E. T. and Garland, C. M. and Marsh, O. J. and McGill, T. C. (1998) Epitaxial silicon grown on CeO2/Si(111) structure by molecular beam epitaxy. Journal of Vacuum Science and Technology B, 16 (5). pp. 2686-2689. ISSN 1071-1023 http://resolver.caltech.edu/CaltechAUTHORS:JONjvstb98
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Using electron beam evaporation, a Si/CeO2/Si(111) structure has been grown in a molecular beam epitaxy machine. In situ low energy electron diffraction, cross sectional transmission electron microscopy, selected area diffraction, and atomic force microscopy have been used to structurally characterize the overlying silicon layer and show it to be single crystalline and epitaxially oriented. Rutherford backscattering and energy dispersive x-ray analysis have been used to confirm the presence of a continuous 23 Å CeO2 layer at the interface. Rutherford backscattering and x-ray photoemission spectroscopy show an additional presence of cerium both at the exposed silicon surface and incorporated in low levels (~ 1%) within the silicon film, suggesting a growth mechanism with cerium riding atop the silicon growth front leaving behind small amounts of cerium incorporated in the growing silicon crystal.
|Additional Information:||©1998 American Vacuum Society. (Received 23 April 1998; accepted 3 July 1998) The authors would like to thank Robert Beach for help with the XPS and RBS measurements, and Maggie Taylor for help with the RBS measurements. This work was supported by the Defense Advanced Research Project Agency, and monitored by the Air Force Office of Scientific Research under Grant No. F49620-96-1-0021.|
|Subject Keywords:||semiconductor-insulator-semiconductor structures; molecular beam epitaxial growth; electron beam deposition; semiconductor growth; semiconductor epitaxial layers; silicon; cerium compounds; elemental semiconductors; low energy electron diffraction; transmission electron microscopy; electron diffraction; atomic force microscopy; Rutherford backscattering; X-ray photoelectron spectra; X-ray chemical analysis|
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|Deposited On:||01 Nov 2006|
|Last Modified:||26 Dec 2012 09:15|
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