CaltechAUTHORS
  A Caltech Library Service

Whispering gallery lasers on semi-insulating GaAs substrates

Ury, I. and Margalit, S. and Bar-Chaim, N. and Yust, M. and Wilt, D. and Yariv, A. (1980) Whispering gallery lasers on semi-insulating GaAs substrates. Applied Physics Letters, 36 (8). pp. 629-631. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:URYapl80

[img]
Preview
PDF
See Usage Policy.

205Kb

Use this Persistent URL to link to this item: http://resolver.caltech.edu/CaltechAUTHORS:URYapl80

Abstract

Double heterostructure lasers are described in which light is guided by total internal reflection along a dielectric interface formed by the perimeter of an etched mesa. By means of the crowding effect, injection current is restricted to a narrow strip adjacent to the edge of the mesa. This results in the preferential excitation of optical modes which are localized in the vicinity of the dielectric interface. Both half-ring lasers formed at a single cleaved facet and quarter-ring lasers formed at a cleaved corner were fabricated.


Item Type:Article
Additional Information:Copyright © 1980 American Institute of Physics Received 14 January 1980; accepted for publication 4 February 1980 Research supported by the Office of Naval Research and the National Science Foundation.
Subject Keywords:SEMICONDUCTOR LASERS; GALLIUM ARSENIDES; SUBSTRATES; P–N JUNCTIONS; N–TYPE CONDUCTORS; P–TYPE CONDUCTORS; REFLECTION; DIELECTRIC PROPERTIES; INTERFACES; ETCHING; OSCILLATION MODES; FABRICATION
Record Number:CaltechAUTHORS:URYapl80
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:URYapl80
Alternative URL:http://dx.doi.org/10.1063/1.91631
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:5836
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:04 Nov 2006
Last Modified:26 Dec 2012 09:15

Repository Staff Only: item control page