Ury, I. and Margalit, S. and Bar-Chaim, N. and Yust, M. and Wilt, D. and Yariv, A. (1980) Whispering gallery lasers on semi-insulating GaAs substrates. Applied Physics Letters, 36 (8). pp. 629-631. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:URYapl80
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Double heterostructure lasers are described in which light is guided by total internal reflection along a dielectric interface formed by the perimeter of an etched mesa. By means of the crowding effect, injection current is restricted to a narrow strip adjacent to the edge of the mesa. This results in the preferential excitation of optical modes which are localized in the vicinity of the dielectric interface. Both half-ring lasers formed at a single cleaved facet and quarter-ring lasers formed at a cleaved corner were fabricated.
|Additional Information:||Copyright © 1980 American Institute of Physics Received 14 January 1980; accepted for publication 4 February 1980 Research supported by the Office of Naval Research and the National Science Foundation.|
|Subject Keywords:||SEMICONDUCTOR LASERS; GALLIUM ARSENIDES; SUBSTRATES; P–N JUNCTIONS; N–TYPE CONDUCTORS; P–TYPE CONDUCTORS; REFLECTION; DIELECTRIC PROPERTIES; INTERFACES; ETCHING; OSCILLATION MODES; FABRICATION|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Archive Administrator|
|Deposited On:||04 Nov 2006|
|Last Modified:||26 Dec 2012 09:15|
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