Ury, Israel and Lau, Kam Y. and Bar-Chaim, Nadav and Yariv, Amnon (1982) Very high frequency GaAlAs laser field-effect transistor monolithic integrated circuit. Applied Physics Letters, 41 (2). pp. 126-128. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:URYapl82
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Abstract
A very low threshold GaAlAs buried heterostructure laser has been monolithically integrated with a recessed structure metal-semiconductor field-effect transistor on a semi-insulating substrate. At cw operation, the device has a direct modulation bandwidth of at least 4 GHz.
| Item Type: | Article |
|---|---|
| Additional Information: | Copyright © 1982 American Institute of Physics Received 22 March 1982; accepted for publication 4 May 1992 This work was supported by the Defense Advanced Research Projects Agency. |
| Subject Keywords: | INTEGRATED CIRCUITS; FIELD EFFECT TRANSISTORS; SEMICONDUCTOR LASERS; GALLIUM ARSENIDES; ALUMINIUM ARSENIDES; HETEROJUNCTIONS; MODULATION; SUBSTRATES; GHZ RANGE; BANDWIDTH |
| Record Number: | CaltechAUTHORS:URYapl82 |
| Persistent URL: | http://resolver.caltech.edu/CaltechAUTHORS:URYapl82 |
| Alternative URL: | http://dx.doi.org/10.1063/1.93425 |
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. |
| Metadata Review: | All Records > Caltech Library Services |
| ID Code: | 5837 |
| Collection: | CaltechAUTHORS |
| Deposited By: | Archive Administrator |
| Deposited On: | 04 Nov 2006 |
| Last Modified: | 29 Nov 2009 21:42 |
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