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Very high frequency GaAlAs laser field-effect transistor monolithic integrated circuit

Ury, Israel and Lau, Kam Y. and Bar-Chaim, Nadav and Yariv, Amnon (1982) Very high frequency GaAlAs laser field-effect transistor monolithic integrated circuit. Applied Physics Letters, 41 (2). pp. 126-128. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:URYapl82

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Abstract

A very low threshold GaAlAs buried heterostructure laser has been monolithically integrated with a recessed structure metal-semiconductor field-effect transistor on a semi-insulating substrate. At cw operation, the device has a direct modulation bandwidth of at least 4 GHz.


Item Type:Article
Additional Information:Copyright © 1982 American Institute of Physics Received 22 March 1982; accepted for publication 4 May 1992 This work was supported by the Defense Advanced Research Projects Agency.
Subject Keywords:INTEGRATED CIRCUITS; FIELD EFFECT TRANSISTORS; SEMICONDUCTOR LASERS; GALLIUM ARSENIDES; ALUMINIUM ARSENIDES; HETEROJUNCTIONS; MODULATION; SUBSTRATES; GHZ RANGE; BANDWIDTH
Record Number:CaltechAUTHORS:URYapl82
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:URYapl82
Alternative URL:http://dx.doi.org/10.1063/1.93425
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:5837
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:04 Nov 2006
Last Modified:26 Dec 2012 09:15

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