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Effect of doping on the optical gain and the spontaneous noise enhancement factor in quantum well amplifiers and lasers studied by simple analytical expressions

Vahala, Kerry J. and Zah, C. E. (1988) Effect of doping on the optical gain and the spontaneous noise enhancement factor in quantum well amplifiers and lasers studied by simple analytical expressions. Applied Physics Letters, 52 (23). pp. 1945-1947. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:VAHapl88a

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Abstract

The maximum optical gain and the spontaneous noise enhancement factor in quantum well structures are expressed as extremely simple functions that are accurate over a wide range of carrier densities. These expressions are used to study the effect of doping on the optical gain and the noise enhancement factor in a 100 Å InGaAs/InP quantum well structure. n-type doping is most effective in reducing the transparency excitation level (laser threshold) and the noise enhancement factor (amplifier noise figure), whereas p-type doping enables increased gain at a given excitation level.


Item Type:Article
Additional Information:Copyright © 2006 American Institute of Physics (Received 14 March 1988; accepted 11 April 1988) The authors are grateful for stimulating discussions with Tien Pei Lee.
Subject Keywords:CRYSTAL DOPING; GAIN; SEMICONDUCTOR LASERS; INDIUM PHOSPHIDES; GALLIUM ARSENIDES; INDIUM ARSENIDES; CARRIER DENSITY; AMPLIFIERS; THEORETICAL DATA; QUANTUM WELL STRUCTURES
Record Number:CaltechAUTHORS:VAHapl88a
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:VAHapl88a
Alternative URL:http://dx.doi.org/10.1063/1.99584
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:5853
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:06 Nov 2006
Last Modified:26 Dec 2012 09:15

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