Hashim, I. and Park, B. and Atwater, H. A. (1993) Epitaxial growth of Cu (001) on Si (001): Mechanisms of orientation development and defect morphology. Applied Physics Letters, 63 (20). pp. 2833-2835. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:HASapl93
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We describe the evolution of microstructure during ultrahigh vacuum ion beam sputter deposition of Cu (001) at room temperature on hydrogen-terminated Si (001). In situ reflection high energy electron diffraction indicates growth of an epitaxial Cu (001) film on Si (001) with the intensity of the Bragg rods sharpening during 5–20 nm of Cu film growth. Post-growth x-ray diffraction indicates the Cu film has a mosaic spread of (001) textures of about ±2° and that a small fraction (0.001–0.01) is of (111) textures. High-resolution transmission electron microscopy shows an abrupt Cu/Si interface with no interfacial silicide, and reveals an evolution in texture with Cu thickness so as to reduce the mosaic spread about (001). Moiré contrast suggests a nearly periodic elastic strain field extending into the Cu and Si at the interface. Other aspects of film growth which are critical to epitaxy are also discussed.
|Additional Information:||Copyright © 1993 American Institute of Physics. Received 1 April 1993; accepted 7 September 1993. This work was supported by NSF and IBM. We would also like to acknowledge DOE Grant No. DEFG0589ER75511 which made the use of Inel Thin Film Diffractometer possible for x-ray analysis. We thank C.M. Garland for assistance with electron microscopy.|
|Subject Keywords:||COPPER; SILICON; EPITAXY; SPUTTERING; ULTRAHIGH VACUUM; ELECTRON DIFFRACTION; X–RAY DIFFRACTION; TRANSMISSION ELECTRON MICROSCOPY; HETEROJUNCTIONS; INTERFACES; STRAINS|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Tony Diaz|
|Deposited On:||07 Nov 2006|
|Last Modified:||26 Dec 2012 09:16|
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