Van Rossum, M. and Nicolet, M-A. and Johnson, W. L. (1984) Amorphization of Hf-Ni films by solid-state reaction. Physical Review B, 29 (10). pp. 5498-5504. ISSN 0163-1829 http://resolver.caltech.edu/CaltechAUTHORS:ROSprb84
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We report on a detailed study of a new process to produce amorphous binary alloys by solid-state reaction of the elemental constituents from an initially thin-layer configuration. The Ni-Hf system was selected on the basis of the criteria that a fast diffuser (Ni) and a large binary heat of mixing drives the solid-state reaction at temperatures so low (∼ 300 °C) that nucleation and growth of the crystalline phases are suppressed and the amorphous phase becomes the lowest accessible state of free energy. Backscattering spectrometry, x-ray diffraction, and transmission electron microscopy are used to monitor the atomic composition profile and the microstructure of the samples. The kinetics of the amorphous phase formation is consistent with the diffusion-limited growth of a laterally uniform amorphous layer. The substantial and approximately linear composition gradient of the amorphous layer reflects the low atomic mobility of the atoms in the amorphous phase and the broad existence range of the amorphous phase in the binary Ni-Hf system. The latter is consistent with predictions based on the calculated equilibrium free-energy diagram of the system.
|Additional Information:||©1984 The American Physical Society Received 22 December 1983 We thank Ali Ghaffari and Rob Gorris for technical assistance, and Dr. R. B. Schwarz, B. Dolgin, and M. Atzmon for useful discussions. We are indebted to Dr. U. Shreter for the TEM work. One of the authors (M.V.R.) would like to acknowledge the financial support of an IBM Fellowship (T. M. Reith, IBM/GPd-Tucson). Partial financial support for this work was provided by the U.S. Department of Energy, Project Agreement No. DE-AT03-81ER10870, under Contract No. DE-AM03-76SF00767.|
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|Deposited On:||08 Nov 2006|
|Last Modified:||26 Dec 2012 09:16|
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