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Electron density effects in the modulation spectroscopy of strained and lattice-matched InGaAs/InAlAs/InP high-electron-mobility transistor structures

Dimoulas, A. and Davidow, J. and Giapis, K. P. and Georgakilas, A. and Halkias, G. and Kornelios, N. (1996) Electron density effects in the modulation spectroscopy of strained and lattice-matched InGaAs/InAlAs/InP high-electron-mobility transistor structures. Journal of Applied Physics, 80 (6). pp. 3484-3487. ISSN 0021-8979. http://resolver.caltech.edu/CaltechAUTHORS:DIMjap96

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Abstract

The effects of the channel electron density on the interband optical transitions of strained (x=0.6 and 0.65) and lattice-matched (x=0.53) InxGa1–xAs/In0.52Al0.48As/InP high-electron-mobility transistor structures have been investigated by phototransmittance at room temperature. Analysis of the ground and first excited transitions for low and high densities, respectively, enabled a separate estimation of the electron densities occupying each one of the first two subbands. It was found necessary to include the modulation of the phase-space filling in the analysis of the spectra, especially for the samples with a high electron density, in which case this modulation mechanism becomes dominant.


Item Type:Article
Additional Information:©1996 American Institute of Physics. (Received 12 February 1996; accepted 4 June 1996)
Subject Keywords:FIELD EFFECT TRANSISTORS; MODULATION SPECTROSCOPY; ELECTRON DENSITY; GALLIUM ARSENIDES; ALUMINIUM ARSENIDES; INDIUM ARSENIDES; INTERBAND TRANSITIONS
Record Number:CaltechAUTHORS:DIMjap96
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:DIMjap96
Alternative URL:http://dx.doi.org/10.1063/1.363219
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:5954
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:09 Nov 2006
Last Modified:26 Dec 2012 09:16

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