Dimoulas, A. and Davidow, J. and Giapis, K. P. and Georgakilas, A. and Halkias, G. and Kornelios, N. (1996) Electron density effects in the modulation spectroscopy of strained and lattice-matched InGaAs/InAlAs/InP high-electron-mobility transistor structures. Journal of Applied Physics, 80 (6). pp. 3484-3487. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:DIMjap96
See Usage Policy.
Use this Persistent URL to link to this item: http://resolver.caltech.edu/CaltechAUTHORS:DIMjap96
The effects of the channel electron density on the interband optical transitions of strained (x=0.6 and 0.65) and lattice-matched (x=0.53) InxGa1–xAs/In0.52Al0.48As/InP high-electron-mobility transistor structures have been investigated by phototransmittance at room temperature. Analysis of the ground and first excited transitions for low and high densities, respectively, enabled a separate estimation of the electron densities occupying each one of the first two subbands. It was found necessary to include the modulation of the phase-space filling in the analysis of the spectra, especially for the samples with a high electron density, in which case this modulation mechanism becomes dominant.
|Additional Information:||©1996 American Institute of Physics. (Received 12 February 1996; accepted 4 June 1996)|
|Subject Keywords:||FIELD EFFECT TRANSISTORS; MODULATION SPECTROSCOPY; ELECTRON DENSITY; GALLIUM ARSENIDES; ALUMINIUM ARSENIDES; INDIUM ARSENIDES; INTERBAND TRANSITIONS|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Archive Administrator|
|Deposited On:||09 Nov 2006|
|Last Modified:||26 Dec 2012 09:16|
Repository Staff Only: item control page