Fabrication of high-density nanostructures by electron beam lithography

Abstract

We demonstrate a fabrication method to define high-density, uniform nanostructures by electron beam lithography at conventional beam voltages (< 40 kV). Here we optimize the exposure and development conditions needed to generate such nanostructure arrays using polymethylmethacrylate as positive resist and isopropyl alcohol as a developer. Arrays of 12 nm dots with 25 nm period and 20 nm lines with 40 nm period were fabricated to show the resolution of this optimized process.