Giapis, Konstantinos P. and Scheller, Geoffrey R. and Gottscho, Richard A. and Hobson, William S. and Lee, Yong H. (1990) Microscopic and macroscopic uniformity control in plasma etching. Applied Physics Letters, 57 (10). pp. 983-985. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:GIAapl90
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By cooling substrates to low temperatures (–40 °C), plasma etching of AlGaAs/AlAs/GaAs structures is performed in an ion-activated, surface reaction limited regime. As a result, microscopic and macroscopic uniformity are vastly improved and etching is independent of gas flow patterns, plasma geometry, and reactor loading. Because the reactant is concentrated on the surface, etching rates remain large.
|Additional Information:||Copyright © 1990 American Institute of Physics. Received 10 April 1990; accepted 19 June 1990.|
|Subject Keywords:||ETCHING; PLASMA; SURFACE REACTIONS; ALUMINUM ARSENIDES; GALLIUM ARSENIDES; OPTIMIZATION|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Tony Diaz|
|Deposited On:||15 Nov 2006|
|Last Modified:||26 Dec 2012 09:17|
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