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Microscopic and macroscopic uniformity control in plasma etching

Giapis, Konstantinos P. and Scheller, Geoffrey R. and Gottscho, Richard A. and Hobson, William S. and Lee, Yong H. (1990) Microscopic and macroscopic uniformity control in plasma etching. Applied Physics Letters, 57 (10). pp. 983-985. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:GIAapl90

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Abstract

By cooling substrates to low temperatures (–40 °C), plasma etching of AlGaAs/AlAs/GaAs structures is performed in an ion-activated, surface reaction limited regime. As a result, microscopic and macroscopic uniformity are vastly improved and etching is independent of gas flow patterns, plasma geometry, and reactor loading. Because the reactant is concentrated on the surface, etching rates remain large.


Item Type:Article
Additional Information:Copyright © 1990 American Institute of Physics. Received 10 April 1990; accepted 19 June 1990.
Subject Keywords:ETCHING; PLASMA; SURFACE REACTIONS; ALUMINUM ARSENIDES; GALLIUM ARSENIDES; OPTIMIZATION
Record Number:CaltechAUTHORS:GIAapl90
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:GIAapl90
Alternative URL:http://dx.doi.org/10.1063/1.103532
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:6029
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:15 Nov 2006
Last Modified:26 Dec 2012 09:17

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