Giapis, Konstantinos P. and Gottscho, Richard A. and Clark, Linda A. and Kruskal, Joseph B. and Lambert, Diane and Kornblit, Avi and Sinatore, Dino (1991) Use of light scattering in characterizing reactively ion etched profiles. Journal of Vacuum Science and Technology A, 9 (3). pp. 664-668. ISSN 0734-2101. http://resolver.caltech.edu/CaltechAUTHORS:GIAjvsta91
See Usage Policy.
Use this Persistent URL to link to this item: http://resolver.caltech.edu/CaltechAUTHORS:GIAjvsta91
Currently, profile control in plasma etching of submicron structures requires inspection of cleaved samples by scanning electron microscopy. This is time consuming, destructive, and limited to a small subset of processed wafers. We show that light scattering can be used to rapidly characterize submicron differences in reactively ion etched, periodic Si structures. A similar approach has been used previously to monitor etching rates and undercutting using specular and first order diffraction peaks. Here, we measure all orders scattered over 180° as a function of incident angle and polarization and focus on the use of this technique coupled with statistical methodology to distinguish subtle changes in line profile. Although scatter from grating test patterns is examined here, this method should also be applicable to complex, submicron device structures.
|Additional Information:||© 1991 American Vacuum Society (Received 29 October 1990; accepted 3 December 1990) We are grateful to J. R. McNeil, S. J. Brueck, T. Jewell, J. Jewell, and S. McCall for stimulating discussions on the subjects of scatterometry and diffraction theory.|
|Subject Keywords:||SILICON; MONOCRYSTALS; ETCHING; ION BEAMS; GRATINGS; INSPECTION; LIGHT DIFFRACTION; PLASMA; POLARIZATION; SCANNING ELECTRON MICROSCOPY|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Archive Administrator|
|Deposited On:||16 Nov 2006|
|Last Modified:||26 Dec 2012 09:17|
Repository Staff Only: item control page