Green, William M. J. and Scheuer, Jacob and DeRose, Guy A. and Yariv, Amnon and Scherer, Axel (2004) Assessment of lithographic process variation effects in InGaAsP annular Bragg resonator lasers. Journal of Vacuum Science and Technology B, 22 (6). pp. 3206-3209. ISSN 1071-1023. http://resolver.caltech.edu/CaltechAUTHORS:GREjvstb04
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Optical microresonators based on an annular geometry of radial Bragg reflectors have been designed and fabricated by electron-beam lithography, reactive ion etching, and an epitaxial transfer process. Unlike conventional ring resonators that are based on total internal reflection of light, the annular structure described here is designed to support optical modes with very small azimuthal propagation coefficient and correspondingly large free spectral range. The effect of lithographic process variation upon device performance is studied. Laser emission wavelength and threshold optical pump power are found to vary between similar devices given different electron doses during electron-beam lithography. As the resonance wavelength and quality factor of these resonators are very sensitive to environmental changes, these resonators make ideal active light sources that can be integrated into large arrays for gas and liquid sensing applications and are easily interrogated.
|Additional Information:||©2004 American Vacuum Society (Received 4 June 2004; accepted 30 August 2004; published 10 December 2004) The authors would like to acknowledge generous support by the NSF, the AFOSR, and DARPA. Dr. Oskar Painter is also thanked for providing help with SiO2 ICP-RIE etch processing.|
|Subject Keywords:||indium compounds; gallium arsenide; gallium compounds; III-V semiconductors; semiconductor epitaxial layers; quantum well lasers; laser cavity resonators; electron beam lithography; sputter etching; optical pumping; microcavities; Q-factor|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Archive Administrator|
|Deposited On:||16 Nov 2006|
|Last Modified:||26 Dec 2012 09:17|
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